Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors

For decades, the fundamental driving force behind energy-efficient and cost-effective electronic components has been downward scaling of devices. However, due to approaching limits silicon-based complementary metal-oxide-semiconductor (CMOS) devices, various emerging materials device structures are considered alternative aspirants, such as negative-capacitance field-effect transistors (NCFETs), for their promising advantages in terms scaling, speed, power consumption. In this article, we present a brief overview progress made on NCFETs, including theoretical experimental approaches, current understanding NCFET physics, possible physical mechanisms NC, future functionalization prospects. addition, context recent findings, critical technological difficulties that must be addressed development also discussed.